Discovery of New Zintl Films and Nanowires Grown by Topotaxy Conversion of III-V Semiconductors
arXiv:2608.22989
Abstract
Zintl phases draw broad interest for their diverse structural, magnetic, thermoelectric, topological and optical properties. Recently, Zintl EuInAs and EuInAs nanowires with axion magneto-topology have been synthesized by molecular beam epitaxy via topotactic conversion of InAs wurtzite and zincblende nanowires. Here we extend this methodology, demonstrating that topotaxial mutual-exchange growth applies not only to a broader set of III-V semiconductors beyond InAs but also to three-dimensional substrates whose surfaces are converted into Zintl thin films, as well as to nanowires. We report the growth of two new compounds: EuGaAs thin films converted from GaAs substrates, and EuAlAs thin films from AlAs films. We also convert GaAs nanowires of both wurtzite and zincblende structures into EuGaAs nanowires. Though the stoichiometry is the same as in the previously reported EuInAs case, microscopy and diffraction reveal a single-phase Pnma symmetry group rather than Pbam, highlighting symmetry-guided topotactic pathways to new Zintl frameworks. The compounds host an intricate magnetic phase diagram with three magnetic transitions, including two distinct antiferromagnetic orders and a canted antiferromagnetic phase that evolves into another antiferromagnetic phase under applied field through a spin-flop transition. Ab initio calculations predict that both Zintls are semiconductors with gaps of 0.79 eV in EuGaAs and 0.90 eV in EuAlAs. The lower symmetry and increased structural complexity suggest suppressed lattice thermal conductivity, pointing to thermoelectric potential alongside prospects in spintronics and detector technologies. These results give an epitaxy-compatible route for discovering and integrating magnetic Zintl thin films and nanowires directly from relevant III-V semiconductors.
47 pages, 20 figures, 2 tables