Coulomb blockade-like transport and enhanced memory in organic transistors embedded with sub-nm Pt nanoparticles for neuromorphic computing

Abstract

Organic transistors are playing an increasingly important role for neuromorphic applications. However, devices that rely solely on ferroelectric switching or on interface traps for their multi-conductance states exhibit limited memory windows. Here, we introduce an ultrathin oxide layer with a uniform distribution of sub-nm platinum nanoparticles (PtNPs) at the interface of a polymer semiconducting and a ferroelectric dielectric in a thin film transistor architecture. The interfacial stack, Al${}_2$O${}_3$/PtNP/Al${}_2$O${}_3$, provides a viable route for localized charge trapping and de-trapping in a region where it can most effectively influence the channel conductance. The organic transistors display a large memory window (> 20 V) in their current-voltage characteristics. The sub-nm PtNPs give rise to features that are consistent with room temperature Coulomb blockade-like transport, supporting discrete and well-separated levels within the memory window. The devices support multimodal programming using electrical and optical stimuli with both long-term plasticity and enhanced short-term plasticity (STP) phenomena. These results open new directions for implementing STP in the development of neuromorphic computing.

19 pages, 4 figures plus supplemental information (7 pages, 8 figures)