paper

Bond Disproportionation, Ligand Holes, and Persistent Spin Textures in AgBiO

arXiv:2608.16247

Abstract

The origin of the proposed bond disproportionated insulating state of the non-centrosymmetric () phase of AgBiO is explored using first principles electronic structure calculations. The novel insulating state is elucidated by first considering the initially proposed centosymmetric metallic () phase of AgBiO. Our calculations reveal that the valence skipping Bi ions in this phase are better described as Bi with completely filled Bi-(6) states and a ligand hole. However, phonon calculations indicate that the metallic () state is dynamically unstable. Structural stability is achieved through breathing distortions of the oxygen octahedra, resulting in two inequivalent Bi sites and a reduction of symmetry to the phase. Electronic structure calculations further reveal that the phase is a bond disproportionated insulator where the nominal charge state of Bi is described by : 2[Bi (Bi)] Bi (Bi1) + Bi (Bi2), highlighting the crucial role of ligand holes in driving the insulating state. Next we have investigated the electronic structure of AgBiO in the insulating () phase including spin-orbit coupling. Our density functional theory (DFT ) calculations complemented by model Hamiltonian analysis reveal persistent spin-textures around the and high symmetry points of the orthorhombic Brillouin zone imposed by non-symmorphic symmetry, positioning AgBiO as a promising candidate for spintronic applications.