Optical linewidth narrowing for device-coupled single T centers
arXiv:2607.28485
The authors use above‑band optical excitation via a laser scanning microscope to reduce the optical linewidth of device‑coupled single T centers in silicon by up to 70%, attributing the effect to filling of nearby charge traps and modeling the dynamics with a rate‑equation approach.
Abstract
Single T centers in silicon have emerged as promising optically active spins for quantum networking applications. One of the major obstacles to advancing the system is their broad optical linewidth due to spectral diffusion, which is two orders of magnitude larger than their cavity-enhanced radiative linewidth. We tackle this issue by utilizing above-band optical excitation delivered via a laser scanning microscope to device-coupled single T centers, achieving up to 70% optical linewidth reduction. We attribute the linewidth narrowing effect to the filling of nearby charge traps by photo-generated free carriers. We analyze charge stabilization dynamics by exploiting pulsed above-band excitation and develop a rate equation model to describe the dynamics and to explain the observed linewidth narrowing and center shift. This work provides an effective pathway to control and reduce the optical linewidth for single T centers, clearing one of the major roadblocks to advance the single T center spin platform for quantum information and networking applications.