THz-Driven Floquet Spin Valve-Modulator

Abstract

Within the scattering matrix ($S$-matrix) framework adapted to the high-frequency Floquet--Magnus formalism based on the length gauge, we investigate spin-dependent quantum transport in a 1D quantum ring with an asymmetric ($\ddot{I}€/2$) configuration of quantum point contacts. We demonstrate the realization of a contactless electromagnetic analog of the Datta--Das spin field-effect transistor with ferromagnetic leads operating at zero static magnetic field. It is shown that an off-resonance terahertz (THz) field enables high-precision switching between spin channels without altering the static parameters of the nanostructure. Driven by an electronic Vernier effect, the quantum interference in the asymmetric geometry yields a selective spin phase rotator alongside an ultra-high-contrast current-suppression regime (``optical shutter''). The proposed architecture is fundamentally robust against multiphoton leakage sidebands, offering a thermally immune, high-speed alternative to conventional semiconductor static spin transistors.

69 pages, 5 figures. Contains extensive analytical derivations within the text and detailed Appendices on the gauge-invariant high-frequency approximation and non-Hermitian determinant factorization