Cluster-configurational study of G-center in Silicon
arXiv:2607.14083
The paper investigates the spin and optical characteristics of G‑centers in silicon using multiconfigurational quantum chemistry combined with DFT-optimized structures, and predicts their spin decoherence times via cluster correlation expansion.
Abstract
Understanding the properties of defects is imperative for proper use for variety of applications including quantum computing. In this paper, we use the multiconfigurational self consistent field (MCSCF) combined with DFT optimized geometry in order to investigate the spin and optical properties of G centers in Silicon. By utilizing quantum chemistry based methods, we show excellent agreement with the Zero Phonon Line and Zero Field Splitting Tensor components of the G center. We also calculate the theoretical spin decoherence time of the G centers using Cluster Correlation Expansion (CCE) methods.
18 pages, 5 figures