Interaction between point defects and vertical inversion domain walls in wurtzite AlN

Abstract

Alloyed aluminium nitride compounds constitute a promising class of ferroelectric materials due to their high remanent electric polarizations, large band gaps and structural compatibility with a growth on Si substrates. Such materials nonetheless possess large coercive fields and polarization-switching mechanisms are still debated. We performed first-principles calculations to investigate the stability of isolated point defects in the vicinity of a vertical inversion domain wall (DW). We found that all studied defects are energetically more stable at or near the DW. Depending on their nature, they can have the opposite effect on the displacement of the DW, which occurs during polarization switching. Finally, we discuss how likely the different defects may be responsible for leaking currents and degraded ferroelectric properties.