Carrier-doping effect and anomalous transport properties in Ni-doped CeCoIn5 investigated by Hall resistivity measurements

Abstract

We investigated the effects of Ni doping on carrier density and anomalous electrical transport properties in CeCo${}_{1-x}$Ni${}_x$In${}_5$ ($x\le 0.3$) by performing Hall resistivity measurements. The carrier density, estimated from the Hall coefficient $R_{\mathrm{H}}$ at a temperature of 0.5 K in high magnetic fields, increases linearly with $x$, indicating that the doped Ni ions act as electron dopants. In CeCoIn${}_5$, the magnitude of $-R_{\mathrm{H}}$ is strongly enhanced at magnetic fields near the superconducting upper critical field $H_{c2}$ and in the low-field region above the superconducting transition temperature $T_c$. However, these anomalies are found to be significantly suppressed by Ni doping. Possible origins of this suppression in $-R_{\mathrm{H}}$ are discussed.

11 pages, 5 figures, to appear in Phys. Rev. B

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