Development and Performance Study of Vertical GaN $\hat{I}\pm$-Particle Detector with High Energy Resolution

Abstract

High-energy-resolution GaN $\hat{I}\pm$-particle detectors have significant potential for space radiation, nuclear instrumentation, and harsh-environment applications. However, existing GaN $\hat{I}\pm$-particle detectors still face several key challenges, including reducing the dead-layer thickness, suppressing leakage current under high reverse bias, improving energy resolution, and clarifying the physical mechanism underlying the low-energy tail phenomenon. This study presents a vertical homoepitaxial GaN $\hat{I}\pm$-particle detector integrating a 20-nm ultrathin dead layer and a guard-ring structure. The detector exhibits an ultralow leakage current of 2.195 nA at -200 V and an intrinsic energy resolution of 2.69% with a charge collection efficiency (CCE) of 95.9% at -260 V. More importantly, this work demonstrates for the first time through Geant4 simulations that depletion-width nonuniformity is the dominant source of partial energy leakage, leading to an extended low-energy tail in the energy spectrum. We establish a depletion-width nonuniformity model and observe good agreement between simulation and experiment. This finding provides practical guidance for the design and optimization of high-performance GaN-based radiation detectors.