Giant Room-Temperature Third-Order Electrical Transport in a Thin-Film Altermagnet Candidate
arXiv:2604.13893 · doi:10.1038/s41565-026-02159-4
Abstract
Quantum geometry, a quantum mechanical quantity comprised of Berry curvature and quantum metric, describes the geometric structure of the electronic bands in solids. The correlation between nontrivial quantum geometry and quantum materials leads to new findings in condensed matter systems. Here we demonstrate that altermagnets, with spontaneously broken time-reversal (T)- half-lattice-translation and parity-time symmetry, host both T-odd and T-even quantum geometric quantities that simultaneously manifest themselves despite the vanishing net magnetization. Consequently, giant room-temperature third-order electrical transport responses with sizable quantum geometric contributions are observed in (101)-oriented RuO2 thin films, an altermagnetic candidate; in particular, the third-order Hall effect is intimately correlated with altermagnetic order and can serve as a promising tool for detecting the Neel vector. Our work not only supports the existence of altermagnetism in 8-nm-thick RuO2 thin films, but also shows altermagnets as a versatile platform for exploring quantum geometry and constructing quantum electronic and spintronic devices.
68 pages, 19 figures, published at Nature Nanotechnology
References in corpus (32)
- WannierTools: An open-source software package for novel topological materials
- Maximally-localized Wannier functions for entangled energy bands
- Quantum nonlinear Hall effect induced by Berry curvature dipole in time-reversal invariant materials
- Crystal Hall effect in Collinear Antiferromagnets
- Observation of the nonlinear Hall effect under time reversal symmetric conditions
- Observation of the Anomalous Hall Effect in a Collinear Antiferromagnet
- Topological nature of nonlinear optical effects in solids
- Field Induced Positional Shift of Bloch Electrons and its Dynamical Implications
- Spontaneous anomalous Hall effect arising from an unconventional compensated magnetic phase in a semiconductor
- Nonlinear Hall Effects
- Superfluidity and Quantum Geometry in Twisted Multilayer Systems
- Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure
- Quantum metric-induced nonlinear transport in a topological antiferromagnet
- Intrinsic nonlinear Hall effect in antiferromagnetic tetragonal CuMnAs
- Intrinsic Second-Order Anomalous Hall Effect and Its Application in Compensated Antiferromagnets
- Essay: Where Can Quantum Geometry Lead Us?
- Dirac nodal lines and induced spin Hall effect in metallic rutile oxides
- Unification of Nonlinear Anomalous Hall Effect and Nonreciprocal Magnetoresistance in Metals by the Quantum Geometry
- Quantum geometry induced nonlinear transport in altermagnets
- Nonlinear anomalous Hall effect for Néel vector detection
- Saturation of the anomalous Hall effect at high magnetic fields in altermagnetic RuO2
- Berry connection polarizability tensor and third-order Hall effect
- Higher-Order Nonlinear Anomalous Hall Effects Induced by Berry Curvature Multipoles
- Quantum geometry in condensed matter
- Third-order intrinsic anomalous Hall effect with generalized semiclassical theory
- Gate-Tunable Berry Curvature Dipole Polarizability in Dirac Semimetal Cd3As2
- Quantum geometry quadrupole-induced third-order nonlinear transport in antiferromagnetic topological insulator MnBi2Te4
- Orbital polarization and third-order anomalous Hall effect in WTe2
- Spin-Splitting Magnetoresistance in Altermagnetic RuO2 Thin Films
- Evidence for single variant in altermagnetic RuO2(101) thin films
- Giant Third-Order Nonlinearity Induced by the Quantum Metric Quadrupole in Few-Layer WTe2
- Charge density wave modulated third-order nonlinear Hall effect in 1-VSe nanosheets