X-ray Response of the Fully-Depleted, p-Channel SiSeRO-CCD

Abstract

We present an X-ray characterization of a fully depleted, 725 $\mu$m thick p-channel SiSeRO-CCD. Measurements with a ${}^{55}$Fe source yield an energy resolution of $54\pm 0.9$ eV ($14.6\pm 0.25e^{-}$) at 5.9 keV for single-pixel events, indicating that the SiSeRO amplifier preserves the intrinsic charge resolution of the CCD under multi-sample non-destructive readout. Characterization with a ${}^{241}$Am source extends the response to higher-energy photons, with reconstructed spectral features observed between 9-26 keV and the 59.5 keV $\gamma$ emission. These measurements, together with a muon-derived diffusion calibration, show that charge transport and diffusion are consistent with interactions spanning the full sensor depth. These results demonstrate that the SiSeRO-CCD simultaneously achieves sub-electron noise performance and efficient charge collection in a thick, fully depleted silicon detector. This combination enables X-ray spectroscopy across a broad energy range while maintaining sensitivity to faint signals.