Joule heating and electronic Gurzhi effect in hydrodynamic differential transport in an electron liquid
arXiv:2603.21346 · doi:10.1103/9ckn-fzpc
Abstract
We perform a differential resistance study in the hydrodynamic regime of electron liquid in GaAs/AlGaAs quantum wells. At zero magnetic field () a Lorentzian profile occurs in the nonlinear transport driven by a U-turn (ac) current loop, in (ac + dc) measurements a minimum deepens with the external dc current bias (). Our analysis shows that the observed electronic transport valley induced by is attributed to Joule heating effect on the electron temperature () of electron liquid. Quantitatively, we demonstrate that the viscosity resistivity () is proportional to and is consistent with the dc-current induced electronic Gurzhi effect in various configurations of measurement.
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