paper

Impact of spin--orbit coupling on orbital diamagnetism in a narrow-gap semiconductor

arXiv:2603.09092 · doi:10.1088/1361-648X/ae2a8d

Abstract

We study the influence of spin--orbit coupling (SOC) on orbital magnetism in , a narrow-gap semiconductor. Using the -matrix method, we calculate material-specific Landau levels and evaluate the magnetization, fully including interband effects. The system exhibits diamagnetism for both and , with the latter showing a stronger response due to its smaller gap. The magnitude of diamagnetism increases monotonically with SOC strength, particularly in strong magnetic fields. To clarify the underlying mechanism, we introduce the free--Zeeman--Dirac (fZD) model and fit its parameters to the calculated Landau levels. The analysis reveals that SOC enhances the Dirac-type interband contribution relative to the Zeeman term, leading to increased diamagnetism. These results demonstrate that SOC can play a key role in orbital magnetism through interband effects.

10 pages, 7 figurres

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