Impact of spin--orbit coupling on orbital diamagnetism in a narrow-gap semiconductor
arXiv:2603.09092 · doi:10.1088/1361-648X/ae2a8d
Abstract
We study the influence of spin--orbit coupling (SOC) on orbital magnetism in , a narrow-gap semiconductor. Using the -matrix method, we calculate material-specific Landau levels and evaluate the magnetization, fully including interband effects. The system exhibits diamagnetism for both and , with the latter showing a stronger response due to its smaller gap. The magnitude of diamagnetism increases monotonically with SOC strength, particularly in strong magnetic fields. To clarify the underlying mechanism, we introduce the free--Zeeman--Dirac (fZD) model and fit its parameters to the calculated Landau levels. The analysis reveals that SOC enhances the Dirac-type interband contribution relative to the Zeeman term, leading to increased diamagnetism. These results demonstrate that SOC can play a key role in orbital magnetism through interband effects.
10 pages, 7 figurres
References in corpus (8)
- Transport Properties and Diamagnetism of Dirac Electrons in Bismuth
- Anomalous Orbital Magnetism and Hall Effect of Massless Fermions in Two Dimension
- Possible Excitonic Phase of Graphite in the Quantum Limit State
- Spin-Hall Effect and Diamagnetism of Dirac Electrons
- Spin-Hall Effect and Diamagnetism of Anisotropic Dirac Electrons in Solids
- Topological Dirac Semimetal Phase in Bismuth Based Anode Materials for Sodium-Ion Batteries
- Magnetizations and de Haas-van Alphen oscillations in massive Dirac fermions
- Probing the semiconductor-to-dirac semimetal transition in Na-Sb-Bi alloys with x-ray Compton scattering