Elucidating NaKSb band structure: near-band-gap photoemission spectroscopy and DFT calculations
arXiv:2602.17105
Abstract
The electronic band structure of NaKSb was studied by a combination of low-energy photoemission spectroscopy and density functional theory (DFT) calculations. The optical and photoemission quantum efficiency (QE) spectra, along with longitudinal energy distribution curves (EDCs) of multialkali NaKSb(Cs,Sb) photocathodes were measured in the temperature range of 80--295 K. The thresholds of various band-to-band transition in NaKSb were observed in the optical and QE spectra of NaKSb(Cs,Sb) photocathodes. The evolution of EDC derivatives with varying photon energy reveals a fine structure related to the emission of two types of electrons: (i) ballistic electrons, which are excited from heavy hole, light hole and split-off valence bands, and (ii) photoelectrons, that are captured in the side valleys of NaKSb conduction band. The analysis of EDCs and QE spectra allowed us to determine the band structure parameters of NaKSb at K, including the band gap eV, spin-orbit splitting eV and the energy separations between and side valleys of the conduction band: eV and eV. The experimentally determined band gaps and side valley positions, as well as the energies of the final electronic states of optical transitions are in good agreement with the DFT calculations. The obtained data on the hot electron dynamics and electronic band structure of NaKSb are crucial to improve the understanding of the photoemission processes in this material and will contribute to the development of the robust spin-polarized electron sources with multialkali photocathodes.
11 pages, 5 figures