Electronic Structure and Superconducting Gap of HgBa${}_2$Ca${}_2$Cu${}_3$O${}_{8+\hat{I}´}$ Revealed by Laser-Based Angle-Resolved Photoemission Spectroscopy

Abstract

The spatially-resolved laser-based high resolution angle resolved photoemission spectroscopy (ARPES) measurements have been performed on the optimally-doped HgBa${}_2$Ca${}_2$Cu${}_3$O${}_{8+\hat{I}´}$ (Hg1223) superconductor with a $T_c$ at 133 K. Two distinct regions are identified on the cleaved surface: the single Fermi surface region where only one Fermi surface is observed, and the double Fermi surface region where two Fermi surface sheets are resolved coming from both the inner (IP) and outer (OP) CuO${}_2$ planes. The electronic structure and superconducting gap are measured on both of these two regions. In both cases, the observed electronic states are mainly concentrated near the nodal region. The momentum dependence of superconducting gap deviates from the standard d-wave form. These results indicate that the surface electronic structure of Hg1223 behaves more like that of underdoped cuprates.

14 pages, 5 figures