Fabrication and Characterization of p-type Inverted Coaxial Point Contact (ICPC) Detectors with a-Ge Dual-Blocking Contacts

Abstract

We report the fabrication and characterization of two p-type inverted coaxial point contact (ICPC) high-purity germanium (HPGe) detectors, SAP16 and SAP17, produced from USD-grown crystals with net impurity concentrations of $\sim 3\times 10^{10}\mathrm{c}{\mathrm{m}}^{-3}$. Both devices employ \emph{thin} amorphous-germanium (a-Ge) dual-blocking contacts, implemented here for the first time on ICPC detectors, to provide bipolar charge blocking while limiting dead-layer thickness. Electrical tests at 76~K demonstrate stable operation with picoampere-level leakage currents and sub-pF capacitance: SAP17 reached $\sim 4.62$~pA at the maximum tested bias (500~V) and operated stably at 400~V with $C\simeq 0.503$~pF. \emph{Meanwhile,} SAP16 achieved superior spectroscopic performance, with energy resolutions of 2.42\% at 59.5~keV and 0.36\% at 662~keV. Gamma-ray spectroscopy with ${}^{241}$Am and ${}^{137}$Cs shows that modest geometric differences lead to measurable changes in depletion behavior and charge-collection uniformity, consistent with electrostatic modeling. Angular-response measurements further reveal pronounced directional sensitivity at 59.5~keV, whereas the 662~keV response is essentially isotropic over the measured range. These results validate thin a-Ge dual-blocking contacts for ICPC HPGe detectors and highlight geometry-driven trade-offs among leakage current, depletion, and energy resolution relevant to low-background and low-threshold applications.

26 pages, 18 figures, and 4 tables