Gate-tuneable single-photon emitters in WSe2 monolayer created via AFM nanoindentation on rigid SiO2/Si substrates

Abstract

Single-photon emitters (SPEs) hosted by two-dimensional (2D) semiconducting materials are envisioned for next-generation quantum applications. However, SPE creation in 2D semiconductors on rigid substrates like SiO2/Si via nanoindentation is a technological gap, critical for interfacing SPEs with photonic circuits and cavities. Here, we report a protocol for deterministically creating SPEs in monolayer WSe2 on SiO2/Si substrates using a sharp diamond AFM (atomic force microscope) tip. A displacement-controlled indentation process is developed, allowing indent depths > 150 nm necessary for creating SPEs. Sharp defect peaks (~200 μeV) are observed in cryogenic (4K) photoluminescence (PL) spectrum at nanoindented sites and are stable upto ~ 120K. 76% of sites exhibit sharp defect-bound peaks confirmed by power-dependent, temperature-dependent, and time-resolved PL (TRPL). AFM and PL mapping link these peaks to indent periphery. The peaks show sub-linewidth spectral jitter, no blinking, and single-photon nature in second-order autocorrelation measurements. SPEs can be switched on/off, and background emissions suppressed using electrical gating. Gate-voltage dependent TRPL indicate that SPE dynamics can be tuned, depending on nature of SPE, pointing the way to higher-purity SPEs. Our work is directly applicable to other 2D materials and photonic circuit/cavity compatible rigid substrates and is a significant step for scalable SPE technologies.

Main text and supplementary files included, 41 pages, 15 figures, 4 tables