Ferroelectric switching at edge dislocations in BaTiO${}_3$ modelled at the atomic scale

Abstract

Ferroelectric switching governs the functional properties of ferroelectric perovskites. It is widely accepted that this switching depends on domain nucleation and pinning and that these processes can be controlled by the defect structure. However, an atomistic picture of the influence of one important class of defects - dislocations on ferroelectric switching is missing. This is an important gap in knowledge as dislocations cannot be avoided at interfaces and can also be engineered by plastic deformation at high temperatures. Using atomistic simulations, we show how the cores of $⟨100⟩$ edge dislocations in BaTiO${}_3$ can either act as nucleation centers for ferroelectric switching or pin walls depending on the direction of the applied field. The coupling between electric field and polarization is strongest when the field is applied parallel to the Burgers vector of the dislocation.

11 pages, 9 figures

References in corpus (5)

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• The nature of deformation-induced dislocations in SrTiO3: Insights from atomistic simulations
• Control of ferroelectric domain wall dynamics by point defects: Insights from ab initio based simulations
• Domain Wall Acceleration by Ultrafast Field Application: An Ab Initio-Based Molecular Dynamics Study
• Pinning of domain walls by strontium layer in BaTiO3 perovskite: an atomic-scale study