Thermally-Activated Epitaxy of NbO

Abstract

We demonstrate a thermally-activated epitaxy window for the growth of NbO at temperatures exceeding 1000 ${}^o$C. NbO films grown in this mode display superior structural and transport properties, which are reproducible across a window of oxygen partial pressure. Through comprehensive analysis, we propose the prototypical electrical properties of NbO, for which a consensus has not yet been made. This study unequivocally demonstrates the utility of high temperatures in the thin film synthesis of refractory metal compounds.

arXiv commentTo appear in PR Materials

References in corpus (1)

• Electronic signature of the vacancy ordering in NbO (Nb3O3)