Wavelength-Dependent Electrical Readout of Spin Ensembles in a Thin-Film SiC-on-Insulator Platform

Abstract

We report electrical spin state readout and coherent control of an ensemble ($\sim$540) of silicon vacancies (${\mathrm{V}}_{\mathrm{Si}}^{-}$) in a silicon carbide-on-insulator (SiCOI) platform, with excitation wavelengths from 780 to 990 nm, demonstrating for the first time spin state readout well beyond the zero phonon line of the V2 ${\mathrm{V}}_{\mathrm{Si}}^{-}$. By implementing photoelectrical detection of magnetic resonance in thin-film SiCOI, we merge a scalable spin readout technique requiring no collection optics, together with a promising platform for future scalable and CMOS-compatible integrated photonics. Furthermore, we provide a comparison of optical and electrical readout between bulk silicon carbide (SiC) and thin-film SiCOI, revealing that our thin-film processing has a measured $T_2$ coherence time of $\approx 7\hat{I}¼$s , similar to that in the bulk SiC. These results extend the capabilities of SiCOI toward electronic and spin-based devices for scalable quantum technologies over a wide range of excitation wavelengths.

Main Text: 11 Pages, 4 Figures; Supplementary: 5 pages, 8 Figures