Single-shot laser-pulse-induced magnetization reversal in CoFeB/MgO-based magnetic tunnel junctions
arXiv:2510.25102
The paper demonstrates that a single laser pulse can reverse the magnetization in CoFeB/MgO magnetic tunnel junctions by adjusting the Ru capping layer thickness, and observes the switching via tunnel magnetoresistance.
Abstract
We demonstrate single-shot laser-pulse-induced magnetization reversal in rare-earth-free CoFeB/MgO magnetic tunnel junctions (MTJs), a material system widely adopted in spin-transfer torque magnetic random-access memory (STT-MRAM). By tuning the Ru capping layer thickness, we modify the laser energy absorption profile and observe magnetization reversal from the parallel (P) to antiparallel (AP) state, with switching observed for nm. Furthermore, we detect magnetization reversal in a micro-scale MTJ device via the tunnel magnetoresistance (TMR) effect. Our findings suggest that ultrafast spin transport, dipolar interactions, or a combination of both may contribute to the switching process, although the precise mechanism remains to be clarified. This work represents a significant step toward integrating ultrafast optical control with MTJ technology.
9 pages, 7 figures. To appear in APL Materials