Oxygen-deficiency-driven phase segregation enables enhanced hole transport in amorphous tellurium oxides
arXiv:2510.00473 · doi:10.1021/acs.chemmater.6c00497
Abstract
Amorphous oxide semiconductors allow scalable electronics, yet high-mobility p-type counterparts remain rare because O- valence bands are typically deep and spatially localized. Motivated by recent reports of unusually high hole mobilities in oxygen-deficient \ce{Se}-doped amorphous tellurium oxides (-\ce{TeO}), we investigated -\ce{TeO} with and without \ce{Se} doping using machine-learning-accelerated ab initio molecular dynamics with hybrid-functional defect calculations. We find that oxygen depletion drives nanoscale segregation into interpenetrating -Te and -TeO domains with distinct roles: Te vacancies in oxide-like/interfacial environments supply holes, while transport is mediated by percolating Te- pathways within the -Te subnetwork. Upon doping, we theoretically verify that Se preferentially incorporates into the -Te domains enhancing connectivity. This preference is nontrivial without explicit modeling given that \ce{Se} shares similar electronic structure with both Te and O. We further find that reducing the oxygen content can likewise enhance hole conductivity. Finally, using amorphous SeO, we show that domain segregation persists in other amorphous chalcogen oxides, suggesting a transferable route to achieving higher-mobility p-type amorphous oxides.
Originally submitted under the title "Atomic networks as highways for holes in oxygen-deficient amorphous oxides"
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