High-pressure electronic states in semiconductors studied by infrared spectroscopy: metallization and band gap tuning in Mg${}_2$Si, InAs and InSb

Abstract

In this article, a brief introduction is first given on infrared studies of materials at high pressures using a diamond anvil cell. Then, our recent results of high-pressure infrared studies are described for Mg${}_2$Si, InAs, and InSb. For Mg${}_2$Si, pressure-induced metallization at pressures near 10 GPa were clearly demonstrated for both carrier-doped and undoped Mg${}_2$Si by large increases of reflectivity. For InAs and InSb, their band gap ($E_g$) increased rapidly and almost linearly with pressure with linear coefficients of $d{E}_g/dP$=84.6 and 112 meV/GPa, respectively. Obtained values of $E_g$ versus lattice parameter at high pressures are compared with those for other IIl-V semiconductors at ambient pressure, giving unique insight into effects of physical and chemical pressures on $E_g$. Above the structural transition pressures of 7 and 3 GPa for InAs and InSb, respectively, they exhibit highly metallic characteristics accompanied by high reflectivity.

10 figures, submitted to a Special Issue of Jpn. J. Appl. Phys