Synergetic Enhancement of Power Factors and Suppression of Lattice Thermal Conductivities via Biaxial Strain in ScAgSe and TmAgTe
arXiv:2509.11051
Abstract
The challenge of achieving high thermoelectric (TE) performance is mainly from the entanglement among Seebeck coefficient (), electrical conductivity (), and lattice thermal conductivity (). In this work, we propose a synergetic strategy of enhancing power factor (PF, ) and suppressing by applying a biaxial tensile strain in two silver chalcogenides ScAgSe and TmAgTe with TlCdS-type structure. The forbidden - orbital coupling at the point and allowed - orbital coupling at the A point and the middle of line leads to high electronic band dispersion along the -A direction and a high-degeneracy valence band valley (). The elongation of the Ag-Se bond under tensile strain weakens the orbital coupling between Ag- and Se/Te- orbitals and reduces the band energy at the A point, which aligns the valence band and achieving a high band degeneracy. Concurrently, the weaker Ag-Se/Ag-Te bond under a small tensile strain leads to lower phonon group velocity and strong three- and four phonon scatterings, leading to lower . Our first-principles calculations combined with electron-phonon coupling analysis as well as phonon and electron Boltzmann transport equations show that applying a 3\% (2\%) tensile strain can enhance the PF along the -axis of ScAgSe (TmAgTe) by 243\% (246\%) at a carrier concentration of 310 cm and reduce the by 37\% (26\%) at 300 K. Consequently, 2 4 times of enhancement is obtained by 3\% or 1\% tensile strain in ScAgSe (TmAgTe) at 300 K, achieving a maximum of 3.10 (3.62) at 800 K. Our material design strategy based on molecular orbital analysis reveals an effective route to boosting TE performance, and can be extended to other systems as well.
9 pages, 5 figures