Achieving fully-compensated ferrimagnetism through two-dimensional heterojunctions

Abstract

In addition to altermagnets, fully-compensated ferrimagnets are another category of collinear magnetic materials that possess zero-net total magnetic moment and exhibit spin-splitting, making them promising for low-energy spintronics, high-density data storage and high-sensitivity sensors. Although many methods, such as alloying, external electric field, Janus engineering, ferroelectric field and spin ordering, have been proposed to achieve fully-compensated ferrimagnetism, these approaches either face experimental difficulties or produce a small spin-splitting or are volatile. Here, we propose to form vertical heterostructures by stacking two different but equally magnetized two-dimensional ferromagnetic materials. If an A-type antiferromagnetic ordering is satisfied, a fully compensated ferrimagnet can be formed. This vertical heterostructure approach is insensitive to lattice matching and stacking manner, thus being more conducive to experimental realization. Through first-principles calculations, we verify our proposal with several examples, focusing in particular on $\mathrm{Cr}{\mathrm{I}}_3$/$\mathrm{CrGeT}{\mathrm{e}}_3$ heterojunction composed of experimentally synthesized $\mathrm{Cr}{\mathrm{I}}_3$ and $\mathrm{CrGeT}{\mathrm{e}}_3$ monolayers. The calculations show that $\mathrm{Cr}{\mathrm{I}}_3$/$\mathrm{CrGeT}{\mathrm{e}}_3$ is a fully-compensated ferrimagnet, with pronounced spin-splitting, and that tensile strain is more favorable for achieving fully-compensated ferrimagnetism. Our work provides an experimentally feasible strategy for realizing fully-compensated ferrimagnetism, thereby further advancing the development of this field.

7 pages, 5 figures