Laser-engineered $\hat{I}“$-point Topology in Trigonal Bismuthene

Abstract

The $\hat{I}“$-point topology represents a significant segment in the family of topological insulators. Here we provide a comprehensive prediction of light-induced $\hat{I}“$-point-based topological manipulation in trigonal bismuthene and its derivatives. Our findings unveil a two-stage process of topological phase transitions (TPT) as the laser intensity increases. Initially, a quantum-spin-Hall or metallic state transitions to a quantum-anomalous-Hall (QAH) state ($C$ = $\pm$3), followed by another TPT that yields a compensated Chern-insulating state ($C$ = 0). The trigonal warping model accounts for these states, describing the $C_{3z}$-rotational band-inversion process, which is determined by $\pm$1 orders of replica bands. Notably, this high Chern-number QAH state persists over a broad range of laser parameters, maintaining functionality beyond room temperature as evidenced by the large global gaps ($\ge$ 60 meV). Our work provides a comprehensive roadmap towards the designer $\hat{I}“$-point topology under laser excitation, facilitating applications of artificial topological materials.