Ferroelectrically Switchable Half-Quantized Hall Effect
arXiv:2507.03985 · doi:10.1021/acs.nanolett.5c00550
Abstract
Integrating ferroelectricity, antiferromagnetism, and topological quantum transport within a single material is rare, but crucial for developing next-generation quantum devices. Here, we propose a multiferroic heterostructure consisting of an antiferromagnetic MnBiTe bilayer and an SbTe film is able to harbor the half-quantized Hall (HQH) effect with a ferroelectrically switchable Hall conductivity of . We first show that, in the energetically stable configuration, the antiferromagnetic MnBiTe bilayer opens a gap in the top surface bands of SbTe through proximity effect, while its bottom surface bands remain gapless; consequently, HQH conductivity of can be sustained clockwise or counterclockwise depending on antiferromagnetic configuration of the MnBiTe. Remarkably, when applying interlayer sliding within the MnBiTe bilayer, its electric polarization direction associated with parity-time reversal symmetry breaking is reversed, accompanied by a reversal of the HQH conductivity. The proposed approach offers a powerful route to control topological quantum transport in antiferromagnetic materials by ferroelectricity.
16 pages, 4 figures
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