Future prospect of anisotropic 2D tin sulfide (SnS) for emerging electronic and quantum device applications

Abstract

The family of anisotropic two-dimensional (2D) emerging materials is rapidly evolving due to their low crystal symmetry and in-plane structural anisotropy. Among these, 2D tin sulfide (SnS) has gained significant attention because of its distinctive crystalline symmetry and the resulting extraordinary anisotropic physical properties. This perspective explores recent developments in anisotropic 2D SnS. In particular, it highlights advances in isolating high-quality SnS monolayers (1L-SnS) and in applying advanced techniques for anisotropic characterization. The discussion continues with an overview of the anisotropic optical and electronic properties of SnS, followed by recent progress in emerging electronic device applications, including energy conversion & storage, neuromorphic (synaptic) systems, spintronics and quantum technologies. In addition to presenting significant research findings on SnS, this perspective outlines current limitations and discusses emerging opportunities and future prospects for its application in quantum devices.

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• Purely in-plane ferroelectricity in monolayer SnS at room temperature
• Recent Advances in Two-Dimensional Metal Monochalcogenides
• In-plane anisotropic faceting of ultralarge and thin single-crystalline colloidal SnS nanosheets
• In-plane anisotropic quantum confinement effect in ultrasmall SnS sheets
• Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
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Cited by in corpus (1)

• Advancements in Entangled Photon Pairs in 2D Van der Waals Materials for On-chip Quantum Applications