Spin-State Selective Excitation in Spin Defects of Hexagonal Boron Nitride

Abstract

Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional platform for quantum sensing, due to its optically addressable spin defects, such as the negatively charged boron vacancy ($V_{\text{B}}^{-}$). Despite hBN being transferrable to close proximity to samples, spectral overlap of spin transitions due to large hyperfine interactions has limited its magnetic sensitivity. Here, we demonstrate spin-selective excitation of $V_{\text{B}}^{-}$ spin defects in hBN driven by circularly polarized microwave. Using a cross-shaped microwave resonance waveguide, we superimpose two orthogonally linearly polarized microwave shifted in phase from a RFSoC FPGA to generate circularly polarized microwaves. This enables selective spin $|0⟩\to |-1⟩$ or $|0⟩\to |1⟩$ excitation of $V_{\text{B}}^{-}$ defects, as confirmed by optically detected magnetic resonance experimentally and supported computationally. We also investigate the influence of magnetic field on spin-state selectivity. Our technique enhances the potential of hBN platform for quantum sensing through better spin state control and magnetic sensitivity particularly at low fields.