Nano-Raman Spectroscopy Analysis of Nanoprotuberances in MoSe2

Abstract

Contaminations in the formation of two-dimensional heterostructures can hinder or generate desired properties. Recent advancements have highlighted the potential of tip-enhanced Raman spectroscopy (TERS) for studying materials in the 2D semiconductor class. In this work, we investigate the influence of 50-200nm sized nanoprotuberances within a monolayer of MoSe${}_2$ deposited on hBN using nano-Raman spectroscopy, establishing correlations between the presence of localized contaminations and the observed hyperspectral variations. A figure of merit is established for the identification of surface impurities, based on MoSe${}_2$ peaks ratio. Notably, new spectral peaks were identified, which are associated with the presence of nanoprotuberances and may indicate contamination and oxidation.

References in corpus (4)

• Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
• Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2
• Phonon Softening and Direct to Indirect Bandgap Crossover in Strained Single Layer MoSe2
• Strained bubbles in van der Waals heterostructures as local emitters of photoluminescence with adjustable wavelength

Cited by in corpus (1)

• Anomalous Tip-Sample Distance Behavior on the Tip-Enhanced Raman Spectroscopy of Graphene in Ambient Conditions