Ultrafast Electronic Structure Engineering in 1-TaS: Role of Doping and Amplitude Mode Dynamics
arXiv:2504.19961 · doi:10.1103/yc4p-y1xg
Abstract
In strongly correlated transition metal dichalcogenides, an intricate interplay of polaronic distortions, stacking arrangement, and electronic correlations determines the nature of the insulating state. Here, we study the response of the electronic structure to optical excitations to reveal the effect of chemical electron doping on this complex interplay. Transient changes in pristine and electron-doped 1 -TaS are measured by femtosecond time-resolved photoelectron spectroscopy and compared to theoretical modeling based on non-equilibrium dynamical mean-field theory and density functional theory. The fine changes in the oscillatory signal of the charge density wave amplitude mode indicate phase-dependent modifications in the Coulomb interaction and the hopping. Furthermore, we find an enhanced fraction of monolayers in the doped system. Our work demonstrates how the combination of time-resolved spectroscopy and advanced theoretical modeling provides insights into the physics of correlated transition metal dichalcogenides.
7 pages, 5 figures
References in corpus (10)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Band insulator to Mott insulator transition in 1T-TaS
- Coherent excitations and electron phonon coupling in Ba/EuFe_2As_2 compounds investigated by femtosecond time- and angle-resolved photoemission spectroscopy
- Mott versus hybridization gap in the low-temperature phase of -TaS
- Photo-induced charge dynamics in 1-TaS
- Doublon-like excitations and their phononic coupling in a Mott charge-density-wave system
- Phase-resolved frequency-domain analysis of the photoemission spectra for photoexcited 1T-TaS2 in the Mott insulating charge density wave state
- Nature of the photo-induced metallic state in monoclinic VO
- Photo-induced insulator-metal transition in paramagnetic (VCr)O
- Effect of Interlayer Stacking on the Electronic Properties of 1-TaS