Effective perpendicular electric field as a probe for interlayer pairing in ambient-pressure superconducting LaPrNiO thin films
arXiv:2503.23861 · doi:10.1103/rm9g-8lm1
Abstract
Recent angle-resolved photoemission spectroscopy (ARPES) experiments on LaPrNiO thin films have revealed a superconducting gap near the diagonal direction for the orbital, confined to a narrow momentum region. Our numerical calculations indicate that interlayer pairing is dominant, resulting in an -wave symmetry. We propose employing perpendicular electric fields, a practical method in thin film systems, to verify the pairing symmetry. Our calculations predict that such fields will induce Fermi arcs or nodal points and significantly modulate the gap near the diagonal, with the modulated region overlapping the area probed by ARPES. This approach provides an effective tool for probing pairing symmetry in bilayer nickelate thin films, especially given current limitations in experimental techniques.
12 pages, 8 figures, including the supplemental material
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Cited by in corpus (5)
- Strain-Engineered Electronic Structure and Superconductivity in LaNiO Thin Films
- Possible Liquid-Nitrogen-Temperature Superconductivity Driven by Perpendicular Electric Field in the Single-Bilayer Film of LaNiO at Ambient Pressure
- Compressive Strain Turns into -Wave Pairing in One-unit-cell LaNiO Thin Film Via Substrate-Induced Hole Doping
- Layer-Resolved Impurity States Reveal Competing Pairing Mechanisms in Trilayer Nickelate Superconductor LaNiO
- Sublattice polarization and filamentary superconductivity in strained graphene