Thermoelectric Performance Boost by Chemical Order in Epitaxial L2 (100) and (110) Oriented undoped FeVAl Thin Films: An Experimental and Theoretical Study
arXiv:2503.21575
Abstract
This study demonstrates the direct correlation between the presence of the L2 ordered phase and the large enhancement in the thermoelectric performance of FeVAl thin films deposited on MgO and AlO substrates at temperatures varying between room temperature and 950C. We employ both experimental techniques and computational modeling to analyze the influence of crystallographic orientation and deposition temperature on the thermoelectric properties, including the Seebeck coefficient, electrical conductivity, and thermal conductivity. Our findings indicate that the presence of the L2 phase significantly enhances the power factor (PF) and figure of merit (zT), surpassing previously reported values for both bulk and thin film forms of FeVAl, achieving a PF of 480 W/mK and a zT of 0.025.
11 pages, 8 figures plus Supplementary information