Nanoscale positioning and in-situ enhancement of single G center in silicon using a fluorescence-localization technique
arXiv:2503.12031 · doi:10.1021/acsphotonics.5c01247
Abstract
Silicon-based semiconductor nanofabrication technology has achieved a remarkable level of sophistication and maturity, and color centers in silicon naturally inherit this advantage. Besides, their emissions appear in telecommunication bands, which makes them play a crucial role in the construction of quantum network. To address the challenge of weak spontaneous emission, different optical cavities are fabricated to enhance the emission rate. However, the relative location between cavity and emitter is random, which greatly reduce the success probability of enhancement. Here, we report on a fluorescence-localization technique (FLT) for precisely locating single G center in silicon and embedding it in the center of a circular Bragg grating cavity in situ, achieving 240-times improvement of the success probability. We observe a 30-fold enhancement in luminescence intensity, 2.5-fold acceleration of the emission from single G center, corresponding to a Purcell factor exceeding 11. Our findings pave the way for the large-scale integration of quantum light sources including those with spins.
References in corpus (8)
- Indistinguishable photons from separated silicon-vacancy centers in diamond
- A solid-state entangled photon pair source with high brightness and indistinguishability
- Silicon Quantum Photonics
- Three megahertz photon collection rate from an NV center with millisecond spin coherence
- Engineering telecom single-photon emitters in silicon for scalable quantum photonics
- Coupling spin defects in hexagonal boron nitride to monolithic bullseye cavities
- Bright Purcell enhanced single-photon source in the telecom O-band based on a quantum dot in a circular Bragg grating
- Bright and pure single-photon source in a silicon chip by nanoscale positioning of a color center in a microcavity