Ultrafast Photoexcitation of Semiconducting Photocathode Materials

Abstract

Cs-based semiconductors like $\mathrm{C}{\mathrm{s}}_3\mathrm{Sb}$ and $\mathrm{C}{\mathrm{s}}_2\mathrm{Te}$ are currently used as photocathodes in particle accelerators. Their performance as electron sources critically depends on their interaction with intense laser sources. In this work, we investigate from first principles the time-dependent response of $\mathrm{C}{\mathrm{s}}_3\mathrm{Sb}$ and $\mathrm{C}{\mathrm{s}}_2\mathrm{Te}$ to ultrafast pulses of varying intensities, ranging from $1GW/c{\mathrm{m}}^2$ to $1PW/c{\mathrm{m}}^2$. Nonlinear effects, including high harmonic generation, emerge starting from $100GW/c{\mathrm{m}}^2$ in $\mathrm{C}{\mathrm{s}}_3\mathrm{Sb}$ and $200GW/c{\mathrm{m}}^2$ in $\mathrm{C}{\mathrm{s}}_2\mathrm{Te}$. Above these intensities, the numbers of absorbed photons and excited electrons saturate due to the depletion of one-photon absorption channels, with renewed increases beyond $1TW/c{\mathrm{m}}^2$ for $\mathrm{C}{\mathrm{s}}_3\mathrm{Sb}$ and $5TW/c{\mathrm{m}}^2$ for $\mathrm{C}{\mathrm{s}}_2\mathrm{Te}$ where multi-photon absorption appears. Finally, the analysis of the occupation density in $\mathrm{C}{\mathrm{s}}_3\mathrm{Sb}$ reveals the onset of tunnel ionization at intensities above $10TW/c{\mathrm{m}}^2$. Our findings provide new insights into the nonlinear optical properties of $\mathrm{C}{\mathrm{s}}_3\mathrm{Sb}$ and $\mathrm{C}{\mathrm{s}}_2\mathrm{Te}$, contributing to the optimization of these materials for the development of next-generation photoinjectors.