A two-dimensional semiconductor-semimetal drag hybrid

Abstract

Lateral charge transport of a two-dimensional (2D) electronic system can be much influenced by feeding a current into another closely spaced 2D conductor, known as the Coulomb drag phenomenon -- a powerful probe of electron-electron interactions and collective excitations. Yet the materials compatible for such investigations remain limited to date. Especially, gapped 2D semiconductors with inherently large correlations over a broad gate range have been rarely accessible at low temperatures. Here, we show the emergence of a large drag response (drag resistance $R_{\text{drag}}$ at the order of k$\hat{I}\text{c◯}$, with a passive-to-active drag ratio up to $\sim$ 0.6) in a semiconductor-semimetal hybrid, realized in a graphene-MoS${}_2$ heterostructure isolated by an ultrathin 3 nm hexagonal boron nitride (h-BN) dielectric. We observe a crossover of $T$ to $T^2$ dependence of $R_{\text{drag}}$, separated by a characteristic temperature $T_d\sim E_F/k_{F}d$ ($d$ being the interlayer distance), in echo with the presence of a metal-insulator transition in the semiconducting MoS${}_2$. Interestingly, the current nanostructure allows the decoupling of intralayer interaction-driven drag response by varying density in one layer with that in the other layer kept constant. A large Wigner-Seitz radius $r_s$ ($>$ 10 within the density range of 1 to $4\times 10^{12}{\mathrm{cm}}^{-2}$) in the massive Schrödinger carriers in MoS${}_2$ is thus identified to dominate the quadratic dependence of total carriers in the drag system, while the massless Dirac carriers in graphene induce negligible drag responses as a function of carrier density. Our findings establish semiconductor-semimetal hybrid as a platform for studying unique interaction physics in Coulomb drag systems.

14 pages, 8 figures