Even-denominator fractional quantum Hall states in the zeroth Landau level of ABA trilayer graphene

Abstract

Even-denominator fractional quantum Hall states (FQHSs) at half filling are of particular interest because they can host non-Abelian quasiparticles. Here we report the emergence of such states in the zeroth Landau level ($N=0$) of ABA trilayer graphene (TLG), challenging the conventional expectation that they are confined to the first excited Landau level. We observe robust incompressible states at $\nu =7/2$, $9/2$, and $5/2$ with their associated Levin--Halperin daughter states: $\nu =59/17$ and $46/13$ near $7/2$; $\nu =58/13$ and $77/17$ near $9/2$; and $\nu =43/17$ near $5/2$. These states appear exclusively within a finite displacement-field window coincident with crossings between symmetry-broken $N=0$ Landau levels carrying distinct isospin indices. The quantitative correspondence between the calculated crossing loci and the experimentally determined stability regions identifies Landau-level mixing as the microscopic origin. We attribute the stabilization of these even-denominator states to inversion-symmetry breaking in TLG, which enhances valley-resolved Landau-level hybridization and renormalizes short-range Coulomb interactions. Our results expand the landscape of even-denominator FQHSs to multilayer graphene and establish TLG as a tunable platform for realizing non-Abelian anyons.

34 pages

References in corpus (33)

• Non-Abelian Anyons and Topological Quantum Computation
• Direct observation of anyonic braiding statistics at the $\nu$=1/3 fractional quantum Hall state
• Particle-hole symmetry and the Pfaffian state
• Particle-Hole Symmetry and the $\nu =5/2$ Quantum Hall State
• Graphene integer quantum Hall effect in the ferromagnetic and paramagnetic regimes
• Even denominator fractional quantum Hall state in bilayer graphene
• Isolated Ballistic Non-Abelian Interface Channel
• Valley Isospin Controlled Fractional Quantum Hall States in Bilayer Graphene
• Observation of a Fractional Quantum Hall State at $\nu =1/4$ in a Wide GaAs Quantum Well
• Recent Experimental Progress of Fractional Quantum Hall Effect: 5/2 Filling State and Graphene
• New Dirac points and multiple Landau level crossings in biased trilayer graphene
• The plasma picture of the fractional quantum Hall effect with internal SU(K) symmetries
• Fractional Quantum Hall Bilayers at Half-Filling: Tunneling-driven Non-Abelian Phase
• Fractional Quantum Hall Effect at $\nu =2+4/9$
• Fractional quantum Hall effects in bilayers in the presence of inter-layer tunneling and charge imbalance
• Transitions from Abelian composite fermion to non-Abelian parton fractional quantum Hall states in the zeroth Landau level of bilayer graphene
• Even-Denominator Fractional Quantum Hall State at Filling Factor ν = 3/4
• Composite-fermion pairing at half and quarter filled lowest Landau level
• High-Resolution Tunneling Spectroscopy of Fractional Quantum Hall States
• Composite fermion pairing induced by Landau level mixing
• Topological phase transition between composite-fermion and Pfaffian daughter states near ν = 1/2 FQHS
• Higher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoiré potential
• Universality of Quantum Phase Transitions in the Integer and Fractional Quantum Hall Regimes
• Fractional Quantum Hall State at Filling Factor $\nu =1/4$ in Ultra-High-Quality GaAs 2D Hole Systems
• Origin of the $\nu =1/2$ fractional quantum Hall effect in wide quantum wells
• Quarter- and half-filled quantum Hall states and their topological orders revealed by daughter states in bilayer graphene
• Fractional quantum Hall effect of partons and the nature of the 8/17 state in the zeroth Landau level of bilayer graphene
• Paired fermions in strong magnetic fields and daughters of even-denominator Hall plateaus
• Identifying the topological order of quantized half-filled Landau levels through their daughter states
• Two-component parton fractional quantum Hall state in graphene
• Hetero-Orbital Two-Component Fractional Quantum Hall States in Bilayer Graphene
• Fractional quantum Hall state at $\nu =1/2$ with energy gap up to 6 K, and possible transition from one- to two-component state
• Tunable Band Inversion in Trilayer Graphene