Electroluminescence in n-type GaAs unipolar nanoLEDs

Abstract

In this Letter, we report the observation of electroluminescence (EL) at around 866 nm from n-i-n unipolar (electron-transporting) III-V GaAs nanoLEDs. The devices consist of nanopillars with top diameter of 166 nm, arranged in a 10x10 pillar array. Hole generation through impact ionization and Zener tunnelling is achieved by incorporating an AlAs/GaAs/AlAs double-barrier quantum well within the epilayer structure of the n-i-n diode. Time-resolved EL measurements reveal decay lifetimes larger than 300 ps, allowing us to estimate an internal quantum efficiency (IQE) higher than 2 per cent at sub-mA current injection. These results demonstrate the potential for a new class of n-type nanoscale light-emitting devices.

7 pages, 5 figures, 7 suplementary figures

References in corpus (2)

• Ultra-low threshold, electrically pumped quantum dot photonic crystal nanocavity laser
• Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices

Cited by in corpus (1)

• Impact of Surface Passivation on the Efficiency and High-speed Modulation of III-V GaAs/AlGaAs Nanopillar Array LEDs