Inverse Rashba-Edelstein THz emission modulation induced by ferroelectricity in CoFeB/PtSe2/MoSe2//LiNbO3 systems
arXiv:2412.20108 · doi:10.1063/5.0256072
Abstract
Spintronic Terahertz emitters, based on optically triggered spin-to-charge interconversion processes, have recently emerged as novel route towards compact and efficient THz sources. Yet, the next challenge for further technologically-relevant devices remains to modulate the emission, with low-energy consumption operation. To this aim, ferroelectric materials coupled to active spin-orbit layers such as two-dimensional transition metal dichalcogenides are suitable candidates. In this work, we present the realization of a large area heterostructure of CoFeB/PtSe2/MoSe2 on a bi-domain LiNbO3 substrate. Using THz time-domain spectroscopy, we show that the ferroelectric polarization direction induces a sizeable modulation of the THz emission. We rationalise these experimental results by using band structure and spin accumulation calculations that are consistent with an interfacial spin-to-charge conversion mediated by inverse Rashba-Edelstein effect at the MoSe2/PtSe2 interface and being tuned by ferroelectricity in the adjacent LiNbO3 surface. This work points out the relevance of field effect spin-orbit architectures for novel THz technologies.
13 pages, 4 figures, 35 references
References in corpus (6)
- Spintronic Sources of Ultrashort Terahertz Electromagnetic Pulses
- Ultrafast spin-currents and charge conversion at 3d-5d interfaces probed by time-domain terahertz spectroscopy
- Ultrafast spin-charge conversion at SnBiTe/Co topological insulator interfaces probed by terahertz emission spectroscopy
- Spintronic THz emitters based on transition metals and semi-metals/Pt multilayers
- Magnetic Proximity induced efficient charge-to-spin conversion in large area PtSe/NiFe heterostructures
- Visualizing giant ferroelectric gating effects in large-scale WSe/BiFeO heterostructures