Unveiling intrinsic bulk photovoltaic effect in atomically thin ReS2

Abstract

The bulk photovoltaic effect (BPVE) offers a promising avenue to surpass the efficiency limitations of current solar cell technology. However, disentangling intrinsic and extrinsic contributions to photocurrent remains a significant challenge. Here, we fabricate high-quality, lateral devices based on atomically thin ReS2 with minimal contact resistance, providing an optimal platform for distinguishing intrinsic bulk photovoltaic signals from other extrinsic photocurrent contributions originating from interfacial effects. Our devices exhibit large bulk photovoltaic performance with intrinsic responsivities of 1 mA/W in the visible range, without the need for external tuning knobs such as strain engineering. Our experimental findings are supported by theoretical calculations. Furthermore, our approach can be extrapolated to investigate the intrinsic BPVE in other non-centrosymmetric van der Waals materials, paving the way for a new generation of efficient light-harvesting devices.

References in corpus (10)

• Photovoltaic effect in an electrically tunable van der Waals heterojunction
• Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating
• Topological nature of nonlinear optical effects in solids
• Design principles for shift current photovoltaics
• Ab initio calculation of the shift photocurrent by Wannier interpolation
• Spontaneous Polarization Induced Photovoltaic Effect In Rhombohedrally Stacked MoS${}_2$
• Polytypism and Unexpected Strong Interlayer Coupling of two-Dimensional Layered ReS2
• Large Bulk Piezophotovoltaic Effect of Monolayer $2H$-MoS${}_2$
• Symmetry regimes for circular photocurrents in monolayer MoSe2
• Bulk photovoltaic effect in two-dimensional ferroelectric semiconductor $\alpha$-In${}_2$Se${}_3$

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