Towards Improved Polarization Uniformity in Ferroelectric Hf${}_{0.5}$Zr${}_{0.5}$O${}_2$ Devices within Back End of Line Thermal Budget for Memory and Neuromorphic Applications

Abstract

Thin film ferroelectric devices with ultralow power operation, non-volatile data retention and fast and reliable switching are attractive for non-volatile memory and as synaptic weight elements. However, low thermal budget ferroelectric oxides suffer from crystalline inhomogeneity and defects that makes their large-scale circuit integration challenging. Here, we report on the thermally engineered way to induce wafer-scale homogeneity in Hf${}_{0.5}$Zr${}_{0.5}$O${}_2$ capacitors that can lead to high device reliability making their integration possible in ultralow power memory and neuromorphic computing hardware.