Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs
arXiv:2411.13448 · doi:10.1016/j.mejo.2025.106623
Abstract
This paper presents a comprehensive study on aspect-ratio dependent optimization for specific on-resistance of three-dimensional high-k superjunction MOSFETs. The research introduces a Taylor modeling method, overcoming the computational limitations of the Bessel method. It also employs the Chynoweth model for more accurate breakdown voltage determination. The study provides a comparative analysis of four different superjunction structures, across five aspects: electric field, impact ionization integral, aspect ratio dependent optimization, charge imbalance effect and temperature. The findings offer valuable insights for the manufacturing guidance of superjunction structure selection