Coulomb impurities in graphene driven by fast ions

Abstract

We provide a theoretical model for electronic transitions in a two-dimensional (2D) artificial atom in a graphene monolayer. The artificial atom is due to the presence of a charged adatom (Coulomb impurity) in the layer and interacts with a fast ultrarelativistic ion moving parallel to the layer. We compute the probability and cross sections for the corresponding electronic transitions by means of an exact solution of the time-dependent 2D Dirac equation describing the interaction of the planar atom with the electromagnetic field of the ultrarelativistic projectile.

References in corpus (8)

• The electronic properties of graphene
• The Coulomb impurity problem in graphene
• The Schwinger mechanism and graphene
• Supercritical Coulomb center and excitonic instability in graphene
• Dynamics of the particle - hole pair creation in graphene
• Dimensionality-driven photoproduction of massive Dirac pairs near threshold in gapped graphene monolayers
• Bound States and Supercriticality in Graphene-Based Topological Insulators
• Light-amplified Landau-Zener conductivity in gapped graphene monolayers: a simulacrum of photo-catalyzed vacuum instability