Giant Rabi frequencies between qubit and excited hole states in silicon quantum dots

Abstract

Holes in Si quantum dots are being investigated for the implementation of electrically addressable spin qubits. In this perspective, the attention has been focused on the electric-field induced transitions between the eigenstates belonging to the ground doublet. Here we theoretically extend the analysis to the first excited doublet. We show that - in a prototypical quantum dot structure - transitions involving the lowest excited states display Rabi frequencies that are several orders of magnitude larger than those occurring in the ground doublet. A clear relation with the symmetries of the eigenstates emerges, as well as a wide tunability of the Rabi frequencies by means of the applied bias. A preliminary discussion on the possible implications of the present results for multilevel manipulation schemes and for multi-hole qubit encodings is provided.