Impact of hole-doping on the thermoelectric properties of pyrite FeS2
arXiv:2411.04771 · doi:10.1016/j.ssc.2025.116194
Abstract
We present a comprehensive first-principles analysis of the thermoelectric transport properties of hole-doped pyrite FeS that includes electron-phonon interactions. This work was motivated by the observed variations in the magnitude of thermopower reported in previous experimental and theoretical studies of hole-doped FeS systems. Our calculations reveal that hole-doped FeS exhibits large positive room-temperature thermopower across all doping levels, with a room-temperature thermopower of 608 V/K at a low hole-doping concentration of 10 cm. This promising thermopower finding prompted a comprehensive investigation of other key thermoelectric parameters governing the thermoelectric figure of merit . The calculated electrical conductivity is modest and remains below 10 S/m at room-temperature for all doping levels, limiting the achievable power factor. Furthermore, the thermal conductivity is found to be phonon driven, with a high room-temperature lattice thermal conductivity of 40.5 W/mK. Consequently, the calculated remains below 0.1, suggesting that hole-doped FeS may not a viable candidate for effective thermoelectric applications despite its promising thermopower.
8 pages, 10 figures, 1 table, 6 equations
References in corpus (5)
- Quantum ESPRESSO toward the exascale
- Perturbo: a software package for ab initio electron-phonon interactions, charge transport and ultrafast dynamics
- Ab initio calculation of carrier mobility in semiconductors including ionized-impurity scattering
- Ferromagnetism in a Semiconductor with Mobile Carriers via Low-Level Nonmagnetic Doping
- Thermoelectric transport properties of electron doped pyrite FeS2