Fabrication of Ultra-Low-Loss, Dispersion-Engineered Silicon Nitride Photonic Integrated Circuits via Silicon Hardmask Etching

Shuai Liu; Yuheng Zhang; Abdulkarim Hariri; Abdur-Raheem Al-Hallak; Zheshen Zhang

paper

Fabrication of Ultra-Low-Loss, Dispersion-Engineered Silicon Nitride Photonic Integrated Circuits via Silicon Hardmask Etching

arXiv:2411.01724

Abstract

Silicon nitride (Si $_{3}$ N $_{4}$ ) photonic integrated circuits (PICs) have emerged as a versatile platform for a wide range of applications, such as nonlinear optics, narrow-linewidth lasers, and quantum photonics. While thin-film Si $_{3}$ N $_{4}$ processes have been extensively developed, many nonlinear and quantum optics applications require the use of thick Si $_{3}$ N $_{4}$ films with engineered dispersion, high mode confinement, and low optical loss. However, high tensile stress in thick Si $_{3}$ N $_{4}$ films often leads to cracking, making the fabrication challenging to meet these requirements. In this work, we present a robust and reliable fabrication method for ultra-low-loss, dispersion-engineered Si $_{3}$ N $_{4}$ PICs using amorphous silicon (a-Si) hardmask etching. This approach enables smooth etching of thick Si $_{3}$ N $_{4}$ waveguides while ensuring long-term storage of crack-free Si $_{3}$ N $_{4}$ wafers. We achieve intrinsic quality factors ( $Q_{i}$ ) as high as $25.6 \times 1 0^{6}$ , corresponding to a propagation loss of 1.6 dB/m. The introduction of a-Si hardmask etching and novel crack-isolation trenches offers notable advantages, including high etching selectivity, long-term wafer storage, high yield, and full compatibility with existing well-developed silicon-based semiconductor processes. We demonstrate frequency comb generation in the fabricated microring resonators, showcasing the platform's potential for applications in optical communication, nonlinear optics, metrology, and spectroscopy. This stable and efficient fabrication method offers high performance with significantly reduced fabrication complexity, representing a remarkable advancement toward mass production of Si $_{3}$ N $_{4}$ PICs for a wide spectrum of applications.