Magnetoresistance oscillations in vertical junctions of 2D antiferromagnetic semiconductor CrPS${}_4$

Abstract

Magnetoresistance (MR) oscillations serve as a hallmark of intrinsic quantum behavior, traditionally observed only in conducting systems. Here we report the discovery of MR oscillations in an insulating system, the vertical junctions of CrPS${}_4$ which is a two dimensional (2D) A-type antiferromagnetic semiconductor. Systematic investigations of MR peaks under varying conditions, including electrode materials, magnetic field direction, temperature, voltage bias and layer number, elucidate a correlation between MR oscillations and spin-canted states in CrPS${}_4$. Experimental data and analysis point out the important role of the in-gap electronic states in generating MR oscillations, and we proposed that spin selected interlayer hopping of localized defect states may be responsible for it. Our findings not only illuminate the unusual electronic transport in CrPS${}_4$ but also underscore the potential of van der Waals magnets for exploring interesting phenomena.

Accepted by Physical Review X

References in corpus (6)

• Magnetic 2D materials and heterostructures
• Proximity-induced ferromagnetism in graphene revealed by anomalous Hall effect
• Structural and optical properties of single- and few-layer magnetic semiconductor CrPS4
• Quantum Oscillations of Electrical Resistivity in an Insulator
• Magnetic structure and exchange interactions in the layered semiconductor CrPS4
• Long distance magnon transport in the van der Waals antiferromagnet CrPS${}_4$