Sulfur Vacancies Limit the Open-circuit Voltage of Sb2S3 Solar Cells
arXiv:2410.10560 · doi:10.1021/acsenergylett.4c02722
Abstract
Antimony sulfide (Sb2S3) is a promising candidate as an absorber layer for single-junction solar cells and the top subcell in tandem solar cells. However, the power conversion efficiency of Sb2S3-based solar cells has remained stagnant over the past decade, largely due to trap-assisted non-radiative recombination. Here we assess the trap-limited conversion efficiency of Sb2S3 by investigating non-radiative carrier capture rates for intrinsic point defects using first-principles calculations and Sah-Shockley statistics. Our results show that sulfur vacancies act as effective recombination centers, limiting the maximum efficiency of Sb2S3 to 16% light to electricity. The equilibrium concentrations of sulfur vacancies remain relatively high regardless of growth conditions, indicating the intrinsic limitations imposed by these vacancies on the performance of Sb2S3.
References in corpus (11)
- Upper limit to the photovoltaic efficiency of imperfect crystals
- Identifying the ground state structures of point defects in solids
- doped: Python toolkit for robust and repeatable charged defect supercell calculations
- Lone pair driven anisotropy in antimony chalcogenide semiconductors
- Upper efficiency limit of Sb2Se3 solar cells
- Band Versus Polaron: Charge Transport in Antimony Chalcogenides
- Imperfections are not 0 K: free energy of point defects in crystals
- Impact of metastable defect structures on carrier recombination in solar cells
- Ab initio calculation of the detailed balance limit to the photovoltaic efficiency of single p-n junction kesterite solar cells
- Four-electron Negative-U Vacancy Defects in Antimony Selenide
- Strong electron-phonon coupling and carrier self-trapping in SbS