Ultra-narrow linewidth laser across the C-band using polarization-controlled dual-cavity feedback
arXiv:2410.08621 · doi:10.1364/OE.544372
Abstract
A standard method to reduce the linewidth of semiconductor lasers involves the use of external optical feedback (EOF). However, feedback powers less than 1 % usually trigger coherence collapse (CC), leading to chaotic laser dynamics and linewidth broadening. This paper explores a method to mitigate CC through precise tuning of the feedback polarization depending on the feedback power. We report a semiconductor laser with a sub-100 Hz intrinsic linewidth, achieved via EOF. The laser features a U-shaped cavity with two sampled grating distributed Bragg reflectors (SG-DBRs), enabling broad tunability across a 42 nm wavelength range (1513-1555 nm). By injecting optical feedback into both sides of the laser cavity via an external fiber-based cavity, we reduce the intrinsic linewidth by more than three orders of magnitude, from MHz to sub-kHz across the laser's tuning range. By dynamically tuning the polarization, we demonstrate sub-100 Hz intrinsic linewidths at feedback powers up to 10 %, marking an improvement over prior studies where CC limited performance.
References in corpus (10)
- Massively parallel coherent laser ranging using soliton microcombs
- Sub-Hz Linewidth Photonic-Integrated Brillouin Laser
- Integrated Waveguide Brillouin Laser
- Vernier spectrometer using counter-propagating soliton microcombs
- Full daylight quantum-key-distribution at 1550 nm enabled by integrated silicon photonics
- High-throughput quantum photonic devices emitting indistinguishable photons in the telecom C-band
- Widely tunable, narrow linewidth external-cavity gain chip laser for spectroscopy between 1.0 - 1.1 um
- Chip-Scale, Sub-Hz Fundamental Sub-kHz Integral Linewidth 780 nm Laser through Self-Injection-Locking a Fabry-Pérot laser to an Ultra-High Q Integrated Resonator
- Suppression of coherence collapse in semiconductor Fano lasers
- Dynamics and stability conditions of semiconductor lasers under external optical feedback from both sides of the laser cavity