Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects

Abstract

In this article, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero ${}^o$C. A sharp superconducting transition at $T\sim 1.3$ K is observed in these epi-Al films. We further show that supercurrent states are realized in Josephson junctions fabricated in the epi-Al/antimonide heterostructures with mobility $\hat{I}¼\sim 1.0\times 10^6$ cm${}^2$/Vs. These results clearly demonstrate we have achieved growing high-quality epi-Al/antimonide heterostructures, a promising platform for the exploration of Josephson junction effects for quantum information science and microelectronics applications.